PART |
Description |
Maker |
S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
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Hamamatsu Photonics
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IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB
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IRF[International Rectifier] International Rectifier, Corp.
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IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A) Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rdson)\u003d 0.018ohm,身份证\u003d 37A条) Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A) 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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International Rectifier, Corp. IRF[International Rectifier]
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IRF3808L IRF3808S RF3808S |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?
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IRF[International Rectifier] International Rectifier, Corp.
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2SK2110 |
N-Channel MOSFET Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
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TY Semicondutor TY Semiconductor Co., Ltd
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IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
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IRF[International Rectifier]
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IRF7342PBF IRF7342TRPBF IRF7342PBF-15 |
HEXFET? Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω) HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ) Generation V Technology
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International Rectifier
|
IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A) Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A) HEXFET? Power MOSFET Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
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IRF[International Rectifier]
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IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A) Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
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IRF[International Rectifier]
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IRFI734G IRFI734 |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=450V Rds(on)=1.2ohm Id=3.4A) Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)
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IRF[International Rectifier]
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IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A) Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
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IRF[International Rectifier] http://
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IRF1407SPBF IRF1407LPBF IRF1407SPBF-15 |
HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078Ω , ID = 100A ) HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A ) Advanced Process Technology
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International Rectifier
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